Drastic Changes in Material Composition and Electrical Properties of Gallium-Seeded Germanium Nanowires
نویسندگان
چکیده
منابع مشابه
Surface chemistry and electrical properties of germanium nanowires.
Germanium nanowires (GeNWs) with p- and n-dopants were synthesized by chemical vapor deposition (CVD) and were used to construct complementary field-effect transistors (FETs). Electrical transport and X-ray photoelectron spectroscopy (XPS) data are correlated to glean the effects of Ge surface chemistry to the electrical characteristics of GeNWs. Large hysteresis due to water molecules strongly...
متن کاملDirection Dependent Electrical and Optical Properties of Gallium Nitride Nanowires
Gallium Nitride (GaN) nanowires were synthesized in two distinct directions <10-10> adirection and <0001> c-direction in a controlled manner using direct nitridation schemes. Field effect transistors based on individual GaN nanowires have been fabricated using the synthesized ‘a’ and ‘c’ direction nanowires. Gate dependent electrical transport measurements performed on the a-direction nanowires...
متن کاملSynthesis and properties of germanium nanowires
As a promising electronic material, Ge nanowire (GeNW) has attracted much attention for its low band gaps, high mobilities, and unprecedented dimensions. This article reviews recent research and advancement on this topic and summarizes many aspects of GeNWs, including preparation, surface chemistry, physical properties, functional devices, and controlled assembly. It is shown that GeNWs can be ...
متن کاملSoluble InP and GaP nanowires: self-seeded, solution-liquid-solid synthesis and electrical properties.
A facile, self-seeded, solution-liquid-solid growth of soluble InP and GaP nanowires with a very low amount of native point defects with respect to the carrier concentrations have been synthesized (see scheme) and characterized. They are potentially promising building blocks in optoelectronic applications.We demonstrate a facile method for self-seeded, solution-liquid-solid growth of soluble In...
متن کاملWater induced electrical hysteresis in germanium nanowires: a theoretical study.
We apply DFT calculations to evaluate the electronic properties of germanium nanowires (GeNWs) upon adsorption of water molecules and reveal the possible causes of the experimentally observed electrical hysteresis in GeNWs based electronic devices. We show that the absorption of water molecules on the GeNW surface would lead to the formation of hydroxyl passivated GeNWs (OH-GeNWs). The first st...
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
ژورنال
عنوان ژورنال: Crystal Growth & Design
سال: 2019
ISSN: 1528-7483,1528-7505
DOI: 10.1021/acs.cgd.9b00210